ABSTRACT: This paper presents novel quadruple cross-coupled memory cell designs, namely Proposed cell (BQCCM10T cell), with complete protection against single event upsets and double-node upsets. The proposed cell BQCCM10T consists of four cross-coupled input-split inverters and a buffer.Memory cell circuits are more sensitive to external radiation phenomena that are likely to cause the occurrence of soft errors SEU & DNU. Therefore, the tolerance of the circuit to the soft errors is a stern requirement in memory cell circuit designs. Since the traditional error-tolerant methods result in significant cost fines in terms of power, area, and performance, the development of low-cost hardened designs for storage cells(such as latches and memories)is of increasing importance. The Proposed cell achieves complete SEU and DNU tolerance through feedback and buffering mechanisms among its internal nodes.The proposed BQCCM10T cell has high robustness and high Read Access time and Write Access Time. With the help of T-Spice, simulation results of several SRAM cells and the BQCCM10T cell are compared.Hence the proposed cell BQCCM10T is used for highly terrestrial reliable low voltage applications..
Keywords: Single Event Upset, Double Node Upset, Memory Cell, Soft Error, Quadruple Cross coupled memory cell.
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