ABSTRACT: Nano films of zinc selenide were deposited on well cleaned fluorine doped tin oxide (FTO) glass substrate using electrodeposition technique. The deposited films were optically, electrically and structurally characterized using M501 UV-visible spectrophotometer in the wavelength range of 300-900nm, MT345 four-point probe and X-ray diffractometer respectively. The experiments were carried out at room temperature (300K).The results show showed that zinc selenide is a direct band gap type semiconductor with band gap energy of 2.5eV and high refractive index value of 2.18-2.64. The deposited films exhibited a cubic structure with preferred orientation along (111) plane.............
Keywords: Nanofilms, FTO, Electrodeposition, four-point probe, XRD, grain size, bandgap energy dislocation density, micro-strain and refractive index
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