ABSTRACT: This paper focuses mainly on dynamic power dissipations at different temperature for both read and write operations of 12T SRAM. In the proposed 12T structure virtual vdd concept is employed because of this leakage current will reduce. Hence reduction in leakage current causes reduction in dynamic power. Power dissipation of the proposed SRAM cell have been determined and compared to those of some other existing memory cells. Proposed cell is a short channel BSIM4 model. It is observed that power dissipation of 12T SRAM for read operation at 40̊̊ is 44.7nw and for write operation it is 38.79nw. The proposed SRAM cell dissipates less power. Simulation has been done in Tanner-13 EDA tool for 50nm.
Keywords: BSIM4 model, Dynamic power, Low power SRAM, Virtual vdd.
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